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| SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO -80 V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 100 -0.15 -0.45 -0.9 -0.8 200 200 170 150 140 40 450 30 -60 -5 -0.1 -10 -0.1 0.3 0.6 -1.25 -1.0 300 MHz ns ns pF TYP. FZT651 FZT751 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V A A A FZT751 C E C B ABSOLUTE MAXIMUM RATINGS. VALUE -80 -60 -5 -6 -3 2 -55 to +150 CONDITIONS. IC=-100A IC=-10mA* IE=100A VCB=-60V VCB=-60V,T =100C VEB=-4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* amb UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Switching Times Output Capacitance V V V V IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE =-5V f=100MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA VCB=-10V, f=1MHz fT ton toff Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 234 FZT751 TYPICAL CHARACTERISTICS 0.6 td tr tf ts ns 700 IB1=IB2=IC/10 0.5 ns 140 - (Volts) 0.4 IC/IB=10 120 600 ts td Switching time 100 500 0.3 tf 80 400 tr 0.2 V 60 300 40 200 0.1 20 100 0 0.0001 0.001 0.01 0.1 1 10 0 0 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 225 1.2 175 - Gain VCE=2V - (Volts) 1.0 IC/IB=10 125 0.8 75 h V 0.6 0.01 0.1 1 10 0 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25C 1.2 1 - (Volts) 1.0 VCE=2V 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100s V 0.4 0.0001 0.01 0.001 0.01 0.1 1 10 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 235 |
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